Epitaxial Equipment : MBE Systems

With its 14 effusion cell ports, the GEN III is today's most popular molecular beam epitaxy (MBE) system for R&D and low-volume production of challenging optoelectronic devices like edge-emitting lasers and vertical cavity surface-emitting lasers (VCSELs). It delivers excellent material quality, high uptime and a modular design that provides both facility and application flexibility. The system grows single 4", 3" or multiple 2" wafers. Its unique cryopanel design, superior effusion cells and dual-zone substrate heater help the GEN III system deliver record-setting wafer performance.